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e PTB 20082 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 10 Watts Linear Power Output Power at 1 dB Compressed = 15 W Class AB Characteristics 30% Collector Efficiency at 7.5 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 20 Output Power (Watts) 16 12 8 4 0 0 1 2 3 4 200 82 LOT COD E VCC = 26 V ICQ = 70 mA f = 2.0 GHz Input Power (Watts) Package 20209 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 1.4 52 0.29 -40 to +150 3.4 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20082 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 5 mA, RBE = 22 VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50 50 4 20 Typ -- -- 5 -- Max -- -- -- -- Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, f = 2.0 GHz) Output Power at 1 dB Compression (VCC = 26 Vdc, ICQ = 70 mA, f = 2.0 GHz) Collector Efficiency (VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, f = 2.0 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, f = 2.0 GHz--all phase angles at frequency of test) Symbol Gpe P-1dB C Min 8 15 30 -- Typ 9 -- -- -- Max -- -- -- 5:1 Units dB Watts % -- Typical Performance POUT, Gain & Efficiency (at P-1dB) vs. Frequency 10 9 8 Broadband Test Fixture Performance 20 60 50 Efficiency (%) 40 30 Gain (dB) 8 -25 10 4 1900 Return Loss (dB) 1925 1950 1975 -35 0 2000 -15 20 Output Power & Efficiency Gain (dB) 60 50 40 16 ICQ = 70 mA POUT = 7.5 W Gain VCC = 26 V 7 6 5 1750 Efficiency (%) 30 Output Power (W) 20 Gain 12 1800 1850 1900 1950 2000 10 2050 Frequency (MHz) Frequency (MHz) 2 5/11/98 Return Loss ICQ = 70 mA Efficiency VCC = 26 V e Output Power vs. Supply Voltage 20 -20 -30 PTB 20082 Intermodulation Distortion vs. Output Power Output Power (Watts) 18 16 14 12 10 22 23 24 25 26 27 IMD (dBc) -40 -50 -60 -70 1 3 5 7 9 11 13 15 VCC = 28 V ICQ = 40 mA f1 = 1999.9 MHz f2 = 2000.0 MHz ICQ = 70 mA f = 2.0 GHz Supply Voltage (Volts) Output Power (Watts-PEP) Power Gain vs. Output Power 10 9 Power Gain (dB) ICQ = 70 mA ICQ = 35 mA 8 7 6 ICQ = 18 mA 5 0.1 1.0 10.0 VCC = 26 V f = 2.0 GHz 100.0 Output Power (Watts) Impedance Data VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA Z Source Z Load Z0 = 50 Frequency GHz 1.75 1.80 1.85 1.90 1.95 2.00 2.05 R 5.8 5.8 5.8 5.8 6.0 7.1 7.7 Z Source jX -12.7 -11.9 -11.4 -10.2 -8.8 -5.9 -4.9 R 9.29 10.15 9.80 9.58 8.83 8.23 8.79 Z Load jX -0.6 -0.9 -1.3 -1.5 -1.5 -1.3 -0.7 3 5/6/98 PTB 20082 Typical Scattering Parameters (VCE = 26 V, IC = 0.5 A) e S11 S21 Ang -176 -176 -176 -178 -179 180 178 177 176 175 173 172 170 168 165 163 160 163 173 -178 -178 -180 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 S12 Ang 82 75 40 22 19 145 149 142 134 125 116 107 98 87 75 59 39 12 -17 -46 -69 -85 S22 Ang -24 -27 -29 31 78 84 81 76 72 66 60 54 50 44 35 24 7 -18 -45 -69 -91 -114 Mag 0.855 0.879 0.931 0.961 0.977 0.984 0.989 0.992 0.998 0.998 0.997 0.991 0.987 0.974 0.950 0.905 0.824 0.708 0.659 0.731 0.827 0.889 Mag 4.80 3.55 1.36 0.558 0.157 0.103 0.263 0.380 0.476 0.563 0.650 0.740 0.847 0.978 1.15 1.39 1.67 1.86 1.83 1.57 1.22 0.919 Mag 0.008 0.007 0.003 0.002 0.004 0.006 0.009 0.012 0.015 0.018 0.021 0.023 0.026 0.030 0.035 0.041 0.047 0.050 0.044 0.033 0.023 0.016 Mag 0.776 0.821 0.911 0.962 0.985 1.00 0.998 0.962 0.931 0.896 0.868 0.833 0.791 0.738 0.674 0.594 0.523 0.552 0.702 0.839 0.892 0.894 Ang -172 -172 -174 -177 180 177 173 170 168 166 165 164 162 161 161 164 173 -172 -167 -171 -178 178 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L1 (c) Ericsson Inc. Components AB 1995 EUS/KR 1301-PTB 20082 Uen Rev. D 09-28-98 4 |
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